Growth and properties of CuInS2 thin films

被引：23

作者：

Agarwal, MK ^{[1
]}

Patel, PD

Chaki, SH

Lakshminarayana, D

机构：

[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India

[2] Sardar Patel Univ, Dept Elect, Vallabh Vidyanagar 388120, Gujarat, India

来源：

BULLETIN OF MATERIALS SCIENCE | 1998年 / 21卷 / 04期

关键词：

CuInS2; flash evaporation; substrate temperature;

D O I：

10.1007/BF02744955

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single phase copper indium disulphide (CuInS2) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were found to be it-type semiconducting, The influence of the substrate temperature on the crystallinity, conductivity, activation energy and optical band gap was studied. An improvement in the film properties could be achieved up to a substrate temperature of 523 K at a molybdenum source temperature of 1873 K.

引用

页码：291 / 295

页数：5

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