Stacking fault directed growth of thin ZnO nanobelt

被引：15

作者：

Chen, Y. X. ^{[1
]}

Zhao, X. Q. ^{[1
]}

Sha, B. ^{[2
]}

Chen, J. H. ^{[1
]}

机构：

[1] Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Hunan, Peoples R China

[2] Shandong Inst Educ, Dept Phys, Jinan 250013, Peoples R China

来源：

MATERIALS LETTERS | 2008年 / 62卷 / 16期

关键词：

A1. ZnO nanobelts; A1. SEM and TEM; A2. growth mechanism; A3. stacking fault;

D O I：

10.1016/j.matlet.2007.12.004

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Thin ZnO nanobelts with an average width of 7.5 nm have been synthesized using vapor-phase transport method. It was found that stacking faults directed the growth of the thin nanobelts along the <01 <(1)over bar>0> direction with {2 (1) over bar(1) over bar0} top/bottom surfaces and {0001} side surfaces. The {0002} stacking fault with translation of 1/3<01 <(1)over bar>0> extends throughout the entire length of the ZnO nanobelts. The growth steps at the {01 (1) over bar0} growth fronts resulted from the {0002} stacking fault are believed to direct fast axial growth of the thin ZnO nanobelts. The thin ZnO nanobelts are expected to be promising candidates for highly sensitive chemical and biological sensor applications. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：2369 / 2371

页数：3

共 15 条

[1]

Self-catalytic branch growth of SnO2 nanowire junctions [J].