Morphological study of kinetic roughening on amorphous and microcrystalline silicon surface

被引：45

作者：

Kondo, M ^{[1
]}

Ohe, T ^{[1
]}

Saito, K ^{[1
]}

Nishimiya, T ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Silicon Solar Cells Superlab, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

a-Si : H; mu c-Si : H; surface morphology;

D O I：

10.1016/S0022-3093(98)00274-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An ex situ study of surface morphology of amorphous (a-Si:H) and microcrystalline silicon (mu c-Si:H) has been carried out to understand their growth mechanism using an atomic force microscope. For a-Si:H, a standard Karder, Parisi and Zhang (KPZ) model well describes the kinetics of the roughness evolution with increasing film thickness except at T(s) similar to 360 degrees C, where a significant roughness enhancement is observed. The morphology of mu c-Si:H on Si(001) substrate shows a similar roughness formation at much lower temperatures of 150 to 200 degrees C. This roughness formation is found to be correlated with the surface hydrogen coverage. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：890 / 895

页数：6

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