A non-vacuum method for synthesis of ZnO films by thermal oxidation of ZnS films in air

被引:11
作者
Chaudhuri, Tapas K. [1 ]
Pathak, Bhuvan [1 ]
机构
[1] Dr KC Patel Res & Dev Ctr, Gujarat 388421, India
关键词
ZnO; semiconductor; thin film; non-vacuum method; thermal oxidation;
D O I
10.1016/j.matlet.2007.04.039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A non-vacuum method for preparation of ZnO films via thermal oxidation of ZnS films deposited by thin layer thermolysis is described. Transmission electron microscopic studies reveals that the films are polycrystalline with preferentially oriented along (100) direction and grain size of 5-10 nm. The films have about 95% transmission in the visible-near infrared (VIS-NIR) region and an energy band gap of 3.22 eV. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:5243 / 5246
页数:4
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