Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor

被引:23
作者
Antunes, AC [1 ]
Antunes, SRM
Pianaro, SA
Longo, E
Leite, ER
Varela, JA
机构
[1] Univ Estadual Ponta Grossa, BR-84031510 Ponta Grossa, PR, Brazil
[2] Univ Fed Sao Carlos, Dept Quim, BR-13565905 Sao Carlos, SP, Brazil
[3] UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
D O I
10.1023/A:1011228914690
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.
引用
收藏
页码:69 / 74
页数:6
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