Magnetoresistance of Ni/NiO/Co small tunnel junctions in Coulomb blockade regime

被引：85

作者：

Ono, K ^{[1
]}

Shimada, H ^{[1
]}

Kobayashi, S ^{[1
]}

Ootuka, Y ^{[1
]}

机构：

[1] UNIV TOKYO, FAC SCI, DEPT PHYS, BUNKYO KU, TOKYO 113, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1996年 / 65卷 / 11期

关键词：

Coulomb blockade; spin-polarized transport; tunnel junction; ferromagnet; single electron charging effect; magnetoresistance;

D O I：

10.1143/JPSJ.65.3449

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report experimental results on the arrays of small (< 0.01 mu m(2)) Ni/NiO/Co tunnel junctions. At high temperatures or high bias conditions, we observed magnetoresistance due to changes in the relative orientation of magnetization of the electrodes. In the Coulomb blockade regime, magnetoresistance is bias-dependent and a large negative magnetoresistance of up to 40% was observed.

引用

页码：3449 / 3451

页数：3

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