Low-noise CMOS integrated sensing electronics for capacitive MEMS strain sensors

被引：21

作者：

Suster, M ^{[1
]}

Guo, J ^{[1
]}

Chaimanonart, N ^{[1
]}

Ko, WH ^{[1
]}

Young, DJ ^{[1
]}

机构：

[1] Case Western Reserve Univ, EECS Dept, Cleveland, OH 44106 USA

来源：

PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2004年

关键词：

D O I：

10.1109/CICC.2004.1358922

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes a high-performance strain sensing microsystem. A MEMS capacitive strain sensor converts an input strain to a capacitance change with a sensitivity of 26.5 aF per 0.1 muepsilon. Low-noise integrated sensing electronics employing a continuous time synchronous detection architecture convert the capacitive signal to an output voltage for further signal processing. The prototype microsystem achieves a minimum detectable strain of 0.09 muepsilon over a 10 kHz bandwidth with a dynamic range of 81 dB. The sensing electronics consume 1.5 mA from a 3 V supply.

引用

页码：693 / 696

页数：4

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