Enhanced photoconductive gain in quantum-well infrared photodetectors

被引：7

作者：

Gadir, MA ^{[1
]}

Harrison, P

Soref, RA

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, IMP, Leeds LS2 9JT, W Yorkshire, England

[2] USAF, Res Lab, SNHC, Sensors Directorate, Hanscom AFB, MA 01731 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 22期

关键词：

D O I：

10.1063/1.1525055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quantum-mechanical scattering theory approach is taken to evaluate the capture probability from the continuum into the quantum wells in quantum-well infrared photodetectors. The calculations show that the capture probability is dependent on the well width, the barrier height, and bias. An additional tunnel barrier is introduced to disturb the continuum levels near the top of the quantum well. It is shown that this can be optimized to reduce the capture probability and thus increase the photoconductive gain of the device. (C) 2002 American Institute of Physics.

引用

页码：4272 / 4274

页数：3

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