Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material

被引：56

作者：

Liu, B

Song, ZT

Feng, SL

Chen, BM

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Inform Technol, State Key Lab Funct Mat Inform, Res Ctr Funct Semicond, Shanghai 200050, Peoples R China

[2] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 82卷 / 02期

基金：

中国博士后科学基金;

关键词：

Sb2Te3; nano-cell-element; current voltage characteristics; chalcogenide random access memory;

D O I：

10.1016/j.mee.2005.07.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase-change nonvolatile memory cell elements composed of Sb2Te3 chalcogenide have been fabricated by using the focused ion beam method. The contact size between the Sb2Te3 phase change film and electrode film in the cell element is 2826 nm(2) (diameter: 60 nm). The thickness of the Sb2Te3 chalcogenide film is 40 nm. The threshold switching current of about 0.1 mA was obtained. A RESET pulse width as short as 5 ns and the SET pulse width as short as 22 ns for Sb2Te3 chalcogenide can be obtained. At least 1000 cycle times with a RESET/SET resistance ratio > 30 times is achieved for Sb2Te3 chalcogenide GRAM cell element. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：168 / 174

页数：7

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