FeRAM technology for high density applications

被引：147

作者：

Mikolajick, T ^{[1
]}

Dehm, C ^{[1
]}

Hartner, W ^{[1
]}

Kasko, I ^{[1
]}

Kastner, MJ ^{[1
]}

Nagel, N ^{[1
]}

Moert, M ^{[1
]}

Mazure, C ^{[1
]}

机构：

[1] Infineon Technol AG Munich, Memory Prod Div, D-81739 Munich, Germany

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 07期

关键词：

Ferroelectric materials - Metallizing - Microelectrodes - Strontium compounds;

D O I：

10.1016/S0026-2714(01)00049-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric random access memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties like nonvolatility, small DRAM-like cell size, fast read and write as well as low voltage/low power behavior. Although standard CMOS processes can be used for frontend and backend/metallization processes, FeRAM technology development has to overcome major challenges due to new materials used for capacitor formation. In this paper, advantages and disadvantages of different ferroelectric materials and major development issues for high density applications are discussed. Results of a 0.5 mum ferroelectric process using SrBi2Ta2O9 as ferroelectric layer, Pt as electrode material as well as two-layer tungsten/aluminum metallization are given as an example. Integration and reliability issues are reviewed. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：947 / 950

页数：4

共 8 条

[1]

DEHM C, UNPUB

[2] Lifetime estimation due to imprint failure in ferroelectric SrBi2Ta2O9 thin films [J].

Grossmann, M ;

Lohse, O ;

Bolten, D ;

Boettger, U ;

Waser, R ;

Hartner, W ;

Kastner, M ;

Schindler, G .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :363-365

[3]

HARTNER W, IN PRESS P 12 INT S

[4]

HINTERMAIER F, 1999, VLSI TECHNOL DIG, P56

[5]

Jung D. J., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P279, DOI 10.1109/IEDM.1999.824151

[6] Low temperature process and thin SBT films for ferroelectric memory devices [J].

Mört, M ;

Schindler, G ;

Hartner, W ;

Kasko, I ;

Kastner, MJ ;

Mikolajick, T ;

Dehm, C ;

Waser, R .

INTEGRATED FERROELECTRICS, 2000, 30 (1-4) :235-244

[7] PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON IR AND IRO2 ELECTRODES [J].

NAKAMURA, T ;

NAKAO, Y ;

KAMISAWA, A ;

TAKASU, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5207-5210

[8]

Nakura T., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P801, DOI 10.1109/IEDM.1999.824271

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