A model for μ-power rectifier analysis and design

被引:141
作者
Curty, JP [1 ]
Joehl, N [1 ]
Krummenacher, F [1 ]
Dehollain, C [1 ]
Declercq, MJ [1 ]
机构
[1] Swiss Fed Inst Technol, EPFL, Elect Labs, CH-2015 Lausanne, Switzerland
来源
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2005年 / 52卷 / 12期
关键词
micropower; model; rectenna; rectifier; wireless power transmission;
D O I
10.1109/TCSI.2005.854294
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a linear two-port model for an N-stage modified-Greinacher full-wave rectifier. It predicts the overall conversion efficiency at low power levels where the diodes are operating near their threshold voltage. The output electrical behavior of the rectifier is calculated as a function of the received power and the antenna parameters. Moreover, the two-port parameter values are computed for particular input voltages and output currents for the complete N-stage rectifier circuit using only the measured I-V and C-V characteristics of a single diode. To validate the model a three-stage modified-Greinacher full-wave rectifier was realized in an silicon-on-sapphire (SOS) CMOS 0.5-mu m technology. The measurements are in excellent agreement with the values calculated using the presented model.
引用
收藏
页码:2771 / 2779
页数:9
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