The thermal stability of one-transistor ferroelectric memory with Pt-Pb5Ge3O11-Ir-Poly-SiO2-Si gate stack

被引：15

作者：

Li, TK ^{[1
]}

Hsu, ST ^{[1
]}

Ulrich, BD ^{[1
]}

机构：

[1] Sharp Labs Amer Inc, Camas, WA 98607 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 11期

关键词：

ferroelectric; one-transistor (IT) memory; Pb5Ge3O11; metal-organic chemical vapor deposition (MOCVD); thermal stability;

D O I：

10.1109/TED.2003.818820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal stability of one-transistor ferroelectric nonvolatile memory devices with gate stack of Pt-Pb5Ge3O11-Ir-Poly-SiO2-Si was characterized in the temperature range of -10 degreesC to 150 degreesC. The memory windows decrease when the temperatures are higher than 60 degreesC. The drain currents (I-D) after programming to on state decrease with increasing temperature. The drain currents(I-D) after programming to off state increase with increasing the temperature. The ratio of drain current (I-D) at on state to that at off state drops from 7.5 orders of magnitude to 3.5 orders of magnitude when the temperature increases from room temperature to 150 degreesC. On the other hand, the memory window and the ratio of I-D(on)/I-D(off) of the one-transistor memory device are practically no change when the temperature is reduced from room temperature to -10 degreesC. One-transistor (1T) memory devices also show excellent thermal imprint properties. Retention properties of 1T memory devices degrade with increasing temperature over 60 degreesC.

引用

页码：2280 / 2285

页数：6

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