Self-annealing of electrochemically deposited copper films in advanced interconnect applications

被引：84

作者：

Ritzdorf, T ^{[1
]}

Graham, L ^{[1
]}

Jin, S ^{[1
]}

Mu, C ^{[1
]}

Fraser, D ^{[1
]}

机构：

[1] Semitool Inc, Kalispell, MT 59901 USA

来源：

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 1998年

关键词：

D O I：

10.1109/IITC.1998.704781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the phenomenon of self-annealing of electrochemically deposited copper films. Sheet resistance was shown to decrease by approximately 20% within tens of hours after deposition at room temperature. At the same time tensile film stress increased and x-ray diffraction results indicate a very large increase in the degree of (111) texture of the film, and/or grain growth. This annealing effect has an activation energy of approximately 1.1 eV, indicating that the time dependence on temperature is very strong.

引用

页码：166 / 168

页数：3