Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T

被引：46

作者：

Rutsch, G ^{[1
]}

Devaty, RP

Choyke, WJ

Langer, DW

Rowland, LB

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[2] Univ Pittsburgh, Dept Elect Engn, Pittsburgh, PA 15260 USA

[3] Northrop Grumman Sci & Technol Ctr, Pittsburgh, PA 15235 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.368266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Hall scattering coefficient r(H) determines the relationship between the measurable Hall coefficient R-H and the free carrier concentration. Reliable knowledge of r(H) is necessary for the precise interpretation of Hall measurements and to validate theoretical transport calculations. We have measured the Hall scattering factor in nitrogen doped 4H and 6H epitaxial layers from 35 to 290 K in magnetic fields up to 9 T. The effective Hall scattering factor varies between 0.91 and 1.21 in 4H SiC and 0.84 and 1.02 in 6H SiC. The effect of the Hall scattering factor on dopant activation energies obtained from Hall measurements is not large enough to explain the difference between dopant activation energies obtained from Hall effect and infrared absorption measurements. (C) 1998 American Institute of Physics. [S0021-8979(98)01516-3].

引用

页码：2062 / 2064

页数：3