Semiconductor-doped-silica saturable-absorber films for solid-state laser mode locking

被引：16

作者：

Bilinsky, IP ^{[1
]}

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] MIT, Dept Elect Engn & Comp Sci, Elect Res Lab, Cambridge, MA 02139 USA

[3] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

OPTICS LETTERS | 1998年 / 23卷 / 22期

关键词：

D O I：

10.1364/OL.23.001766

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We describe a new saturable-absorber materials system for solid-state laser mode locking based on thin, nonepitaxially grown, semiconductor-doped films. We fabricated thin Films of InAs semiconductor microcrystalites in silica, using rf sputtering. We could control the linear absorption by varying the film thickness, and the nonlinear absorption saturation cross section and recovery time could be adjusted by use of rapid thermal annealing. The use of 30-nm-thick InAs-doped silica films on sapphire for initiation of Kerr-lens mode locking in a Ti:Al2O3 laser was demonstrated. Pulses as short as 25 fs were generated with a wavelength tuning range from 800 to 880 nn. (C) 1998 Optical Society of America.

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页码：1766 / 1768

页数：3

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