Electronic switching effect and phase-change transition in chalcogenide materials

被引：105

作者：

Redaelli, A ^{[1
]}

Pirovano, A

Pellizzer, E

Lacaita, AL

Ielmini, D

Bez, R

机构：

[1] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy

[2] STMicroelect, Cent Res & Dev, I-20041 Agrate Brianza, Italy

[3] Politecn Milan, CNR, IFN, I-20133 Milan, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 10期

关键词：

amorphous semiconductors; chalcogenide; crystal growth; nonvolatile memories; phase change memories (PCM);

D O I：

10.1109/LED.2004.836032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold switching mechanism in amorphous chalcogenides is investigated, showing experimental data that once and for all demonstrate its electronic nature. The physical mechanisms responsible for the switching to the highly conductive state are discussed and the impact of cumulative read-out pulses is also investigated, showing that phase-change transitions induced by usual reading operations in phase-change memory cells are completely negligible.

引用

页码：684 / 686

页数：3

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