Sensitive analysis of deposition chemistry of Cu from (hfac)Cu(tmvs) using well characterized test structure

The chemistry of Cu-CVD from the precursor (hfac)Cu(tmvs) on sputtered TiN films was investigated using a simple tubular reactor analysis. In the present study, the validity of a proposed reaction mechanism and its rate constants were investigated using a well characterized test structure(Macrocavity). The macrocavity was prepared by stacking silicon wafers with spacing ranging from 0.1-0.5mm, and placing the stacked structure in the tubular reactor. The growth rate profile within a macrocavity is simulated from a derived equation using the reaction mechanism and late constants obtained from previous work. The variation of the absolute growth rate around the center of a macrocavity with varying wafer spacing indicates that the Cu deposition is proceeded via gas phase reaction to produce a reaction intermediate. As a whole, the simulated growth rate profiles agree very well the experimental data. Therefore, we conclude that the mechanism and reaction rate constants from our research are valid and can be applied to the prediction of growth rate of Cu from the (hfac)Cu(tmvs) system.