Electronic structure of organic films in the first excited states determined using scanning tunneling spectroscopy: An experimental and theoretical study

被引:2
作者
Arima, V
Della Sala, F
Matino, F
Blyth, RIR
Barbarella, G
Melucci, M
Cingolani, R
Rinaldi, R
机构
[1] Univ Lecce, INFM, Natl Nanotechnol Lab, Distretto Tecnol ISUFI, I-73100 Lecce, Italy
[2] Icocea, CNR, I-40129 Bologna, Italy
关键词
D O I
10.1103/PhysRevB.72.085425
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a pilot study of whether laser-assisted scanning tunneling spectroscopy (STS) can be used to investigate the changes in electronic structure between the ground state and first singlet (S-1) excited states of thin films of organic molecules. STS measurements of 4",3"-dimethylsexithiophene and pentacene, excited into their S-1 states using suitable continuous wave laser excitation, show a narrowing of the electronic gap. These results are consistent with theoretical calculations of the electronic structure of these molecules in their S-1 states.
引用
收藏
页数:8
相关论文
共 80 条
[1]  
ALDRICHS R, TURBOMOLE VERSION 5
[2]  
[Anonymous], 1993, INTRO SCANNING TUNNE
[3]   Solid-state conformation, molecular packing, and electrical and optical properties of processable β-methylated sexithiophenes [J].
Barbarella, G ;
Zambianchi, M ;
Antolini, L ;
Ostoja, P ;
Maccagnani, P ;
Bongini, A ;
Marseglia, EA ;
Tedesco, E ;
Gigli, G ;
Cingolani, R .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1999, 121 (38) :8920-8926
[4]  
Bauerle P, 1998, ELECTRONIC MATERIALS: THE OLIGOMER APPROACH, P105
[5]  
Beasley M.R, 2002, REPORT INVESTIGATION
[6]   DENSITY-FUNCTIONAL THERMOCHEMISTRY .3. THE ROLE OF EXACT EXCHANGE [J].
BECKE, AD .
JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (07) :5648-5652
[7]   DENSITY-FUNCTIONAL EXCHANGE-ENERGY APPROXIMATION WITH CORRECT ASYMPTOTIC-BEHAVIOR [J].
BECKE, AD .
PHYSICAL REVIEW A, 1988, 38 (06) :3098-3100
[8]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[9]   TUNNELING SPECTROSCOPIC ANALYSIS OF OPTICALLY-ACTIVE WIDE BAND-GAP SEMICONDUCTORS [J].
BONNELL, DA ;
ROHRER, GS ;
FRENCH, RH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :551-556
[10]   SURFACE PHOTOVOLTAGE OF AG ON SI(111)-7X7 BY SCANNING TUNNELING MICROSCOPY [J].
CAHILL, DG ;
HAMERS, RJ .
PHYSICAL REVIEW B, 1991, 44 (03) :1387-1390