Role of osmium in the electrical transport mechanism of polycrystalline tin oxide thin films

被引：18

作者：

Forleo, A ^{[1
]}

Capone, S ^{[1
]}

Epifani, M ^{[1
]}

Siciliano, P ^{[1
]}

Rella, R ^{[1
]}

机构：

[1] CNR, Ist Microelettron & Microsistemi, Sez Lecce, I-73100 Lecce, Italy

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.1643536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped and Os-doped SnO2 thin films have been deposited by the sol-gel method. Their electrical properties have been investigated by resistivity and Hall effect measurements in order to understand the role of Os in the electrical transport mechanism. The measurements have been carried out in 100-500 K temperature range both in a vacuum and in air. The experimental results have been analyzed according to the grain-boundary scattering mechanism and they have been used to explain the response toward CH4 of the Os-doped SnO2 thin-film-based gas sensors. (C) 2004 American Institute of Physics.

引用

页码：744 / 746

页数：3

共 14 条

[1] Square and collinear four probe array and Hall measurements on metal oxide thin film gas sensors
Faglia, G
Comini, E
Sberveglieri, G
Rella, R
Siciliano, P
Vasanelli, L
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1998, 53 (1-2) : 69 - 75
[2] Silicon based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement
Hammond, JW
Liu, CC
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 2001, 81 (01) : 25 - 31
[3] HARTNAGEL HL, SEMICONDUCTING TRANS, pCH3
[4] STUDY ON THE SENSING MECHANISM OF TIN OXIDE FLAMMABLE-GAS SENSORS USING THE HALL-EFFECT
IPPOMMATSU, M
OHNISHI, H
SASAKI, H
MATSUMOTO, T
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) : 8368 - 8374
[5] Kazmerski L. L., 1980, Polycrystalline and amorphous thin films and devices, P59
[6] SURFACE PROCESSES IN THE DETECTION OF REDUCING GASES WITH SNO2-BASED DEVICES
KOHL, D
[J]. SENSORS AND ACTUATORS, 1989, 18 (01): : 71 - 113
[7] KOX PA, 1982, SOLID STATE COMMUN, V44, P837
[8] ORTON JW, 1980, REP PROG PHYS, V43, P1267
[9] THEORY OF PHOTOCONDUCTIVITY IN SEMICONDUCTOR FILMS
PETRITZ, RL
[J]. PHYSICAL REVIEW, 1956, 104 (06): : 1508 - 1516
[10] A novel gas sensor based on SnO2/Os thin film for the detection of methane at low temperature
Quaranta, F
Rella, R
Siciliano, P
Capone, S
Epifani, M
Vasanelli, L
Licciulli, A
Zocco, A
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1999, 58 (1-3) : 350 - 355

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