Post-growth, In doping of CdTe single crystals via vapor phase

被引：6

作者：

Lyahovitskaya, V ^{[1
]}

Kaplan, L ^{[1
]}

Goswami, J ^{[1
]}

Cahen, D ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 1-2期

基金：

以色列科学基金会;

关键词：

CdTe; doping; In; In4Te3;

D O I：

10.1016/S0022-0248(98)00908-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have developed a new, efficient method to dope bulk single crystals of CdTe by In, via gas phase diffusion, using In4Te3 as the source. Doping was carried out on crystals of very high resistivity (>5 M Omega cm), following annealing in the temperature range of 350-1000 degrees C. Resulting crystals showed n-type conductivity with a free carrier concentration in the range: of 10(15)-10(18) cm(-3) and carrier mobility of 100-750 cm(2)/(V s), depending on the annealing temperature and time, and on the cooling conditions. Incorporation of In was found to be a function of annealing time and temperature only. Up to 650 degrees C, the In and the free electron concentrations are roughly the same. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：106 / 112

页数：7

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