Reduced thermal conductivity in low-temperature-grown GaAs

被引:27
作者
Jackson, AW [1 ]
Ibbetson, JP
Gossard, AC
Mishra, UK
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.123839
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal conductivity of low-temperature-grown GaAs(LT GaAs) was measured at room temperature using a self-heated photolithographically patterned platinum wire on the surface of the sample. Finite element calculations were performed to extract the thermal conductivity from the nonlinear I-V characteristic of the wires. For LT GaAs grown at a substrate temperature of 240 degrees C, the thermal conductivity was found to be only 23% of the value for stoichiometric GaAs. Rapid thermal annealing of the sample at 650 degrees C for 30 s increased the thermal conductivity to 46% of the GaAs value. Strong phonon scattering by point defects could account for reduced thermal conductivity in the as-grown material. The reduced thermal conductivity in the annealed material, however, is not consistent with our current understanding of the defects in annealed LT GaAs. (C) 1999 American Institute of Physics. [S0003-6951(99)01516-8].
引用
收藏
页码:2325 / 2327
页数:3
相关论文
共 9 条
[1]  
*ANS U, ANS U V 5 5
[2]  
Bhandari C. M., 1988, THERMAL CONDUCTION S
[3]   THERMAL-CONDUCTIVITY OF THIN SIO2-FILMS [J].
BROTZEN, FR ;
LOOS, PJ ;
BRADY, DP .
THIN SOLID FILMS, 1992, 207 (1-2) :197-201
[4]   RAPID THERMAL ANNEALING OF LOW-TEMPERATURE GAAS-LAYERS [J].
LILIENTALWEBER, Z ;
LIN, XW ;
WASHBURN, J ;
SCHAFF, W .
APPLIED PHYSICS LETTERS, 1995, 66 (16) :2086-2088
[5]   THERMAL-CONDUCTIVITY OF BINARY, TERNARY, AND QUATERNARY III-V COMPOUNDS [J].
NAKWASKI, W .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) :159-166
[6]  
Schafft H. A., 1989, P IEEE INT C MICROEL, V2, P121
[7]   THERMAL CONDUCTIVITY OF POTASSIUM CHLORIDE CRYSTALS CONTAINING CALCIUM [J].
SLACK, GA .
PHYSICAL REVIEW, 1957, 105 (03) :832-842
[8]   Diffuse reflectance spectroscopy measurement of substrate temperature and temperature transient during molecular beam epitaxy and implications for low-temperature III-V epitaxy [J].
Thompson, P ;
Li, Y ;
Zhou, JJ ;
Sato, DL ;
Flanders, L ;
Lee, HP .
APPLIED PHYSICS LETTERS, 1997, 70 (12) :1605-1607
[9]   Optical and terahertz power limits in the low-temperature-grown GaAs photomixers [J].
Verghese, S ;
McIntosh, KA ;
Brown, ER .
APPLIED PHYSICS LETTERS, 1997, 71 (19) :2743-2745