Growth and characterization of L10 FePt and CoPt ⟨001⟩ textured polycrystalline thin films

被引:54
作者
Jeong, S [1 ]
McHenry, ME [1 ]
Laughlin, DE [1 ]
机构
[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
基金
美国安德鲁·梅隆基金会; 美国国家科学基金会;
关键词
FePt and CoPt; perpendicular magnetic anisotropy; reversal mechanism; thin films;
D O I
10.1109/20.950826
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin [001] textured FePt and CoPt polycrystalline films (5 nm) were deposited with an MgO polycrystalline underlayer on an oxidized Si substrate followed by a Rapid Thermal Annealing (RTA) process. Structural analysis indicated the samples to be fully ordered after 10 minutes (min) of RTA at 700 degreesC. The magnetic hysteresis exhibited strong perpendicular anisotropy and a coercivity (H-c) between 6 and 8 kOe. The measured and simulated angular dependence of He and remanent coercivity (H-rc) showed the possibility of domain wall motion or incoherent rotation. deltaM curves demonstrated strong intergranular exchange coupling. MFM observations showed domain sizes to be 100-200 nm. Activation volumes (V-act) were found to be similar to0.4-0.5 x 10(-18)cm(3). The temperature dependence of the coercivity (H-c) indicated a weak pinning mechanism.
引用
收藏
页码:1309 / 1311
页数:3
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