Spontaneous growth of freestanding Ga nanoribbons from Cr2GaC surfaces

被引：25

作者：

Sun, ZM

Gupta, S

Ye, HH

Barsoum, MW

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

[2] Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan

来源：

JOURNAL OF MATERIALS RESEARCH | 2005年 / 20卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.2005.0326

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein we report on the room-temperature spontaneous growth of Ga freestanding nanoribbons from Cr2GaC surfaces. An oxidation-based model is proposed to explain the growth of the nanostructures. The nanoribbons present a unique opportunity to study the behavior of electrons confined to two dimensions. The production of these Ga nanostructures could be the first step in the manufacture of gallium arsenide or nitride devices with enhanced characteristics for photonic, electronic, and catalytic applications.

引用

收藏

页码：2618 / 2621

页数：4

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