Surface transfer p-type doping of epitaxial graphene

被引：551

作者：

Chen, Wei ^{[1
]}

Chen, Shi ^{[1
]}

Qi, Dong Chen ^{[1
]}

Gao, Xing Yu ^{[1
]}

Wee, Andrew Thye Shen ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2007年 / 129卷 / 34期

关键词：

D O I：

10.1021/ja071658g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.

引用

页码：10418 / 10422

页数：5

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