Magnetoresistance of Mn:Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix

被引：175

作者：

Park, YD ^{[1
]}

Wilson, A ^{[1
]}

Hanbicki, AT ^{[1
]}

Mattson, JE ^{[1
]}

Ambrose, T ^{[1
]}

Spanos, G ^{[1
]}

Jonker , BT ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 18期

关键词：

D O I：

10.1063/1.1369151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a thin film magnetic system consisting of nanoscale Mn11Ge8 ferromagnetic clusters embedded in a MnxGe1-x dilute ferromagnetic semiconductor matrix. The clusters form for growth temperatures of similar to 300 degreesC with an average diameter and spacing of 100 and 150 nm, respectively. While the clusters dominate the magnetic properties, the matrix plays a subtle but interesting role in determining the transport properties. Variable range hopping at low temperatures involves both nanoclusters and Mn-Ge sites, and is accompanied by a negative magnetoresistance attributed in part to spin-dependent scattering analogous to metallic granular systems. (C) 2001 American Institute of Physics.

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页码：2739 / 2741

页数：3

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