Screw dislocations in GaN: The Ga-filled core model

被引：147

作者：

Northrup, JE ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 16期

关键词：

D O I：

10.1063/1.1361274

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

First-principles total energy calculations performed for [0001] screw dislocations in GaN with \b\ = c indicate that a model with a helical Ga-filled core is more stable than the hollow core model in Ga-rich conditions. This model gives rise to electronic states dispersed throughout the band gap. Such a dislocation is therefore expected to be a very strong center for nonradiative recombination and a pathway for current leakage. (C) 2001 American Institute of Physics.

引用

页码：2288 / 2290

页数：3

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