Two-dimensional dopant profiling and imaging of 4H silicon carbide devices by secondary electron potential contrast

被引：14

作者：

Buzzo, M ^{[1
]}

Ciappa, M

Stangoni, M

Fichtner, W

机构：

[1] Infineon Technol, Qual Management & Failure Anal, Villach, Austria

[2] ETH, Swiss Fed Inst Technol, Integrated Syst Lab, Zurich, Switzerland

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2005.07.069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent publications reported a surprisingly intensive dopant contrast arising in Secondary Electron SEM images of Silicon Carbide devices. This work gives an insight into the physics of the contrast generation and discusses the proper experimental setup to be used for the quantitative two-dimensional delineation of bipolar and homojunctions in Silicon Carbide devices. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1499 / 1504

页数：6

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