Versatile use of vertical-phase-separation-induced bilayer structures in organic thin-film transistors

被引：211

作者：

Qiu, Longzhen ^{[1
]}

Lim, Jung Ah ^{[1
]}

Wang, Xiaohong ^{[1
]}

Lee, Wi Hyoung ^{[1
]}

Hwang, Minkyu ^{[1
]}

Cho, Kilwon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 06期

关键词：

D O I：

10.1002/adma.200702505

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A semiconductor-top and dielectric-bottom bilayer structure is fabricated by surface-induced vertical phase separation of poly (3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) blends (see figure). This structure allows to prepare high-performance, low-semiconductor-content, and low-voltage-driven TFTs in a very effective method, in which the dielectric and semiconductor layers are deposited onto a substrate in a one-step process.

引用

页码：1141 / +

页数：6

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