Low-resistance IrMn and PtMn tunnel valves for recording head applications

被引：47

作者：

Childress, JR ^{[1
]}

Schwickert, MM ^{[1
]}

Fontana, RE ^{[1
]}

Ho, MK ^{[1
]}

Rice, PM ^{[1
]}

Gurney, BA ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.1361050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the use of ultrathin Al2O3 barriers to fabricate low-resistance tunnel-valve sensors suitable for recording heads. Tunnel valves of the type underlayer/(IrMn or PtMn)/CoFe/Al2O3/CoFe/NiFe/Cap layer have been fabricated by magnetron sputtering. Tunnel barriers are formed by Al metal deposition followed by in situ oxidation, and tunnel-junction test devices are built by photolithography with areas down to 1 x 1 mum(2). Specific resistances as low as 13 Ohm mum(2) with 25% tunnel magnetoresistance have been obtained using Al thicknesses of 6-7 Angstrom. (C) 2001 American Institute of Physics.

引用

页码：7353 / 7355

页数：3

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