Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors

被引：25

作者：

Chen, SD ^{[1
]}

Chen, YY

Lee, SC

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 25期

关键词：

D O I：

10.1063/1.1929881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By introducing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse-electric- (TE) field-enhanced multicolor quantum-dot (QD) infrared photodetector has been achieved. The TE-enhanced peaks are due to the transition from the S-like ground state to the P-like first excited states induced by the strain field effects on the quantum dot. After rapid thermal annealing, the TE dominant peaks can be changed to transverse-magnetic- (TM) field-enhanced and vice versa. This is because the rapid thermal annealing creates defects at the boundary of QDs and their surrounding material, which release the compressive strain within the QDs. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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