Magnetoresistance and morphology in magnetic multilayers by insertion of very thin Fe, Co layers

被引:2
作者
Hwang, DG
Lee, SS
Lee, KA
Park, CM
Kim, MY
Choi, KR
Choi, SJ
Lee, YH
Rhee, JR
机构
[1] DANKOOK UNIV,DEPT PHYS,CHEONAN 330704,SOUTH KOREA
[2] SOOKMYUNG WOMENS UNIV,DEPT PHYS,SEOUL 140742,SOUTH KOREA
[3] SOOKMYUNG WOMENS UNIV,DEPT PHYS,SEOUL 140742,SOUTH KOREA
关键词
D O I
10.1109/20.539085
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Dependences of magnetoresistance and morphology upon the insertion of very thin magnetic layers at interfaces between magnetic and nonmagnetic layers in Co/Cu and Ni81Fe19/Cu multilayers have been investigated. The Co/Cu multilayers with inserted Fe thickness of 0.5 similar to 1.0 Angstrom have the MR ratio of about 18% more than the noninserted multilayers, and the MR ratio in the NiFe/Cu multilayers with inserted Co of thickness of 3 Angstrom was found to be significantly increased. These results can be explained by the enhanced interlayer antiferromagnetic coupling and spin-dependent scattering phenomena at the interface. Of particular interest, the ''Clustered out-growth'' in the surface morphology of these multilayers was observed.
引用
收藏
页码:4579 / 4581
页数:3
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