Scattering theory of the short channel MOSFET

A simple, physical approach for modeling ultrasubmicron MOSFETs is introduced. The approach, based on scattering probabilities, produces analytical results that reduce to conventional ones for long channel devices but which apply to ballistic MOSFETs as well. The new model is related to conventional models, and issues such as the role of inversion layer mobility, velocity overshoot, and identifying the maximum saturated drain current, are addressed.