Photovoltaic p-i-n structure of Sb2S3 and CuSbS2 absorber films obtained via chemical bath deposition

被引：102

作者：

Rodríguez-Lazcano, Y ^{[1
]}

Nair, MTS ^{[1
]}

Nair, PK ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Dept Solar Energy Mat, Temixco 62580, Morelos, Mexico

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 08期

关键词：

D O I：

10.1149/1.1945387

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Chemically deposited, near-intrinsic Sb2S3 thin films and p-CuSbS2 thin films obtained through heating Sb2S3-CuS thin films have been integrated into a p-i-n structure: SnO2:F-(n)CdS:In-(i)Sb2S3-(p)CuSbS2-Ag. An open-circuit voltage of 345 mV has been observed under an intensity of illumination of 1 kW m(-2) using a tungsten-halogen lamp. The short-circuit current was 0.2 mA/cm(2). Structural, optical, and electrical properties of Sb2S3 and CuSbS2 are presented. X-ray photoelectron spectroscopy depth profile on the CuSbS2 film indicated uniformity in composition with respect to Cu, Sb, and S atoms through the film thickness. X-ray diffraction studies using standard mode and grazing incidence at fixed angles showed the layer structure of the photovoltaic p-i-n device. (c) 2005 The Electrochemical Society. All rights reserved.

引用

页码：G635 / G638

页数：4

共 17 条

[1] Semiconducting tin selenide thin films prepared by heating Se-Sn layers [J].