Electronic stopping power for Monte Carlo simulation of ion implantation into SiC

被引：6

作者：

Morvan, E ^{[1
]}

Godignon, P ^{[1
]}

Berberich, S ^{[1
]}

Vellvehi, M ^{[1
]}

Millán, J ^{[1
]}

机构：

[1] CSIC, Ctr Nacl Microelect, Bellaterra, Spain

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 147卷 / 1-4期

关键词：

electronic stopping; ion implantation; silicon carbide; dopant profiles;

D O I：

10.1016/S0168-583X(98)00548-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A new electronic stopping pot-ver model for Monte Carlo simulation of ion implantation into 6H-SiC is presented. This model is based on the nonlinear density functional approach of Echenique et al. for the energy loss of slow ions moving through an electron gas and the ab initio pseudopotential calculations of Park et al. for the map of valence electrons of 6H-SiC crystal. A modified linear response theory has been used to treat the core electrons stopping. This model does not need fitting parameters and arrows to fit the experimental distributions of implanted dopants in SiC both the peak region and the channeling tail of the SIMS profiles. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：68 / 73

页数：6

共 16 条

[1] EMPIRICAL DEPTH PROFILE SIMULATOR FOR ION-IMPLANTATION IN 6H-ALPHA-SIC [J].