High-temperature conductance of the single-electron transistor

被引：14

作者：

Goppert, G ^{[1
]}

Grabert, H ^{[1
]}

机构：

[1] Univ Freiburg, Fak Phys, D-79104 Freiburg, Germany

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.58.R10155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Linear conductance of the single-electron transistor is determined in the high-temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and are found to explain recent experimental data. [S0163-1829(98)50640-6].

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收藏

页码：R10155 / R10158

页数：4

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