MOCVD growth of AlGaN UV LEDs

被引：4

作者：

Han, J ^{[1
]}

Crawford, MH ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷

关键词：

GaN; AlGaN; ultraviolet emitter; gas-phase reaction;

D O I：

10.1117/12.311042

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH3, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH3) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30-50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM similar to 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.

引用

页码：46 / 50

页数：5