Single-qubit-gate error below 10-4 in a trapped ion

被引：165

作者：

Brown, K. R. ^{[1
]}

Wilson, A. C. ^{[1
]}

Colombe, Y. ^{[1
]}

Ospelkaus, C. ^{[1
]}

Meier, A. M. ^{[1
]}

Knill, E. ^{[1
]}

Leibfried, D. ^{[1
]}

Wineland, D. J. ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA

来源：

PHYSICAL REVIEW A | 2011年 / 84卷 / 03期

关键词：

D O I：

10.1103/PhysRevA.84.030303

中图分类号：

O43 [光学];

学科分类号：

070207 [光学];

摘要：

With a Be-9(+) trapped-ion hyperfine-state qubit, we demonstrate an error probability per randomized single-qubit gate of 2.0(2) x 10(-5), below the threshold estimate of 10(-4) commonly considered sufficient for fault-tolerant quantum computing. The Be-9(+) ion is trapped above a microfabricated surface-electrode ion trap and is manipulated with microwaves applied to a trap electrode. The achievement of low single-qubit-gate errors is an essential step toward the construction of a scalable quantum computer.

引用

页数：4

共 23 条

[1]

Towards fault-tolerant quantum computing with trapped ions [J].