Effect of pressure on magnetic properties of U(Ga1-xSnx)(3) alloys

被引：6

作者：

Grechnev, GE

Panfilov, AS

Svechkarev, IV

Kaczorowski, D

Troc, R

Czopnik, A

机构：

[1] B VERKIN INST LOW TEMP PHYS & ENGN, UA-310164 KHARKOV, UKRAINE

[2] W TRZEBIATOWSKI INST LOW TEMP & STRUCT RES, PL-50950 WROCLAW, POLAND

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 157卷

关键词：

density of states; itinerant magnetism; pressure effect; stoner enhancement factor;

D O I：

10.1016/0304-8853(96)00013-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic susceptibilities, chi, of U(Ga1-xSnx)(3) alloys (with x = 0 and 0.45) were studied under pressures up to 2 kbar in the temperature range 64-300 K. For UGa3 the pressure dependence of the Neel temperature was found to be dT(N)/dP = - 1.1 +/- 0.2 K/kbar. The obtained magnetovolume effect values, dln chi/dlnV, and the results of detailed theoretical calculations of the electronic structure of UGa3 for different lattice parameters have been used to evaluate the volume dependence of the effective: electron-electron interaction parameter.

引用

页码：702 / 703

页数：2

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