Electronic states and optical gain in strained CdS/ZnS quantum structures

被引:45
作者
Woggon, U
Petri, W
Dinger, A
Petillon, S
Hetterich, M
Grun, M
ODonnell, KP
Kalt, H
Klingshirn, C
机构
[1] Institut für Angewandte Physik der Universität Karlsruhe, 76128 Karlsruhe
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 03期
关键词
D O I
10.1103/PhysRevB.55.1364
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultrathin, coherently strained CdS layers have been grown epitaxially on ZnS with nominal thicknesses below the critical value for strain relaxation. These CdS/ZnS quantum structures, which show efficient photoluminescence and optical gain in the deep blue to ultraviolet spectral range, have been analyzed with respect to the dimensionality of the electronic states. It has been found that in wide-gap II-VI quantum structures small monolayer fluctuations result in such strong localization of excitons that the localization depth reaches energies around 100 meV. Consequently, the luminescence and gain can well be explained by optical transitions from an ensemble of spatially distributed exciton states in which the deepest and decoupled states can be considered as individual, three-dimensionally confined excitons.
引用
收藏
页码:1364 / 1367
页数:4
相关论文
共 10 条
[1]   DEEP BLUE AND UV PHOTOLUMINESCENCE FROM ZNS/CDS SUPERLATTICES AND QUANTUM-WELLS [J].
BRUNTHALER, G ;
LANG, M ;
FORSTNER, A ;
GIFTGE, C ;
SCHIKORA, D ;
FERREIRA, S ;
SITTER, H ;
LISCHKA, K .
JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) :559-563
[2]   Femtosecond optical gain in strongly confined quantum dots [J].
Giessen, H ;
Woggon, U ;
Fluegel, B ;
Mohs, G ;
Hu, YZ ;
Koch, SW ;
Peyghambarian, N .
OPTICS LETTERS, 1996, 21 (14) :1043-1045
[3]   INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].
GRUNDMANN, M ;
STIER, O ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981
[4]   Zero-dimensional excitons in (Zn,Cd)Se quantum structures [J].
Lowisch, M ;
Rabe, M ;
Stegemann, B ;
Henneberger, F ;
Grundmann, M ;
Turck, V ;
Bimberg, D .
PHYSICAL REVIEW B, 1996, 54 (16) :11074-11077
[5]   ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].
MARTIN, RM .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+
[6]  
NIKITIN V, UNPUB
[7]   CRITICAL THICKNESS OF COMMON-ANION-II-VI STRAINED LAYER SUPERLATTICES (SLSS) [J].
PARBROOK, PJ ;
HENDERSON, B ;
ODONNELL, KP ;
WRIGHT, PJ ;
COCKAYNE, B .
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :492-496
[8]   Temperature dependence of the photoluminescence of ZnSe/ZnS quantum-dot structures [J].
Wu, YH ;
Arai, K ;
Yao, T .
PHYSICAL REVIEW B, 1996, 53 (16) :10485-10488
[9]  
WU YH, 1996, PHYS REV B, V53, pR10
[10]   EXCITON BINDING-ENERGIES IN II-VI-COMPOUND STRAINED LAYER SUPERLATTICES [J].
YANG, F ;
PARBROOK, PJ ;
TRAGER, C ;
HENDERSON, B ;
ODONNELL, KP ;
WRIGHT, PJ ;
COCKAYNE, B .
SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (04) :461-465