Study of the correlation between crystal defects and properties of CdTe:Ge radiation detectors

被引：4

作者：

Feichuk, P

Shcherbak, L

Pluta, D

Moravec, P

Franc, J

Belas, E

Hoschl, P

机构：

来源：

MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 1997年 / 3182卷

关键词：

cadmium telluride; X-ray detector; crystal defect structure; precipitations; inclusions;

D O I：

10.1117/12.280410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High resistivity Ge-doped crystals with exact defined by radiometric analysis Ge contain were characterized by infrared microskopy, dislocation etch techniques, scanning electron microscopy followed by detector perfomence features examenation. The influence of several defect structure types on detector parameters wes shown.

引用

页码：100 / 106

页数：7