Electronic transport properties of p-type CoSb3

被引：3

作者：

Anno, H ^{[1
]}

Tashiro, H ^{[1
]}

Notohara, Y ^{[1
]}

Sakakibara, T ^{[1
]}

Hatada, K ^{[1
]}

Motoya, K ^{[1
]}

Shimizu, H ^{[1
]}

Matsubara, K ^{[1
]}

机构：

[1] Sci Univ Tokyo, Onoda 756, Japan

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.667149

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The electronic transport properties were investigated on polycrystalline p-type CoSb3, with different grain sizes (about 3 and 3 x 10(2) mu m) to clarify the important factors which affect the hole mobility. The magnetic susceptibility was also measured. Samples were found to be stoichiometric and homogeneous without any segregation of other phases. From the temperature dependence of the hole mobility, it was found that the predominant scattering mechanism depends significantly on grain size. The magnetic susceptibility was found to be diamagnetic independently of grain size, and to depend weakly on the temperature. The susceptibility can be explained by taking into account the three contributions due to ion cores, conduction electrons, and residual magnetic impurities. From the analysis of the susceptibility, the effects of residual magnetic impurities on the transport properties were found to be negligible. In addition, the band gap energy of CoSb3 was determined to be about 70 similar to 80,meV. The grain size is one of the key factors determining the transport properties of polycrystalline p-type CoSb3.

引用

页码：343 / 346

页数：4