Full-relativistic calculations of the SrTiO3 carrier effective masses and complex dielectric function

被引:55
作者
Marques, M
Teles, LK
Anjos, V
Scolfaro, LMR
Leite, JR
Freire, VN
Farias, GA
da Silva, EF
机构
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] Univ Fed Ceara, Dept Fis, BR-60455900 Fortaleza, Ceara, Brazil
[3] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil
关键词
D O I
10.1063/1.1570922
中图分类号
O59 [应用物理学];
学科分类号
摘要
We perform fully relativistic band-structure calculations for cubic SrTiO3, which are used to obtain carrier effective masses and the frequency behavior of its complex dielectric function epsilon(omega). The obtained values and anisotropy of the carrier effective masses are shown to be highly influenced by the relativistic contributions. In order to evaluate the static dielectric constant, the low-frequency behavior of epsilon(omega) is obtained by taking into account also the optical phonon contributions to the imaginary part of epsilon(omega), adopting a simplified classical oscillator dispersion model. It is found that the phonon contribution leads to about 240 times (at T=85 K) the value of the bare electronic contribution to the dielectric constant. The calculated temperature dependence of the dielectric constant is shown to be consistent with that observed in bulk SrTiO3 static permittivity measurements. (C) 2003 American Institute of Physics.
引用
收藏
页码:3074 / 3076
页数:3
相关论文
共 21 条
[1]   Electronic and optical properties of BaTiO3 and SrTiO3 [J].
Ahuja, R ;
Eriksson, O ;
Johansson, B .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (04) :1854-1859
[2]   FAR-INFRARED FERROELECTRIC VIBRATION MODE IN SRTIO [J].
BARKER, AS ;
TINKHAM, M .
PHYSICAL REVIEW, 1962, 125 (05) :1527-&
[3]   TEMPERATURE DEPENDENCE OF TRANSVERSE AND LONGITUDINAL OPTIC MODE FREQUENCIES AND CHARGES IN SRTIO3 AND BATIO3 [J].
BARKER, AS .
PHYSICAL REVIEW, 1966, 145 (02) :391-+
[4]   Field effect transistors with SrTiO3 gate dielectric on Si [J].
Eisenbeiser, K ;
Finder, JM ;
Yu, Z ;
Ramdani, J ;
Curless, JA ;
Hallmark, JA ;
Droopad, R ;
Ooms, WJ ;
Salem, L ;
Bradshaw, S ;
Overgaard, CD .
APPLIED PHYSICS LETTERS, 2000, 76 (10) :1324-1326
[5]   Electronic structure of cubic SrHfO3: Ferroelectric stability and detailed comparison with SrTiO3 [J].
Fabricius, G ;
Blanca, ELPY ;
Rodriguez, CO ;
Ayala, AP ;
de la Presa, P ;
Garcia, AL .
PHYSICAL REVIEW B, 1997, 55 (01) :164-168
[6]   Thickness dependence of dielectric loss in SrTiO3 thin films [J].
Li, HC ;
Si, WD ;
West, AD ;
Xi, XX .
APPLIED PHYSICS LETTERS, 1998, 73 (04) :464-466
[7]   ENERGY-BANDS FOR KNIF3, SRTIO3, KMOO3, AND KTAO3 [J].
MATTHEISS, LF .
PHYSICAL REVIEW B, 1972, 6 (12) :4718-4740
[8]   Crystalline oxides on silicon: The first five monolayers [J].
McKee, RA ;
Walker, FJ ;
Chisholm, MF .
PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3014-3017
[9]   Electronic structure of a grain-boundary model in SrTiO3 [J].
Mo, SD ;
Ching, WY ;
Chisholm, MF ;
Duscher, G .
PHYSICAL REVIEW B, 1999, 60 (04) :2416-2424
[10]  
MULLER KA, 1979, PHYS REV B, V19, P3593, DOI 10.1103/PhysRevB.19.3593