Electrostatic patterning of a silica surface: A new model for charge build-up on a dielectric solid

被引:25
作者
Gouveia, RF [1 ]
Costa, CAR [1 ]
Galembeck, F [1 ]
机构
[1] Univ Estadual Campinas, Inst Chem, BR-13084971 Campinas, SP, Brazil
关键词
D O I
10.1021/jp0457601
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The polarization of interdigitated gold electrodes mounted over a silica thin film formed by oxidation of a Si wafer produces reproducible electrostatic patterns with overall excess negative charge, as observed by scanning electric potential microscopy. Domain charge concentrations as high as 76 charge units per square micrometer are obtained when a 5 V difference is applied to the electrodes thus producing fields in the 10(6) V m(-1) range. These patterns vanish when the electrodes are short-circuited and grounded. Characteristic times for pattern formation and relaxation are in the order of 10 min. The results are consistent with a model based on the discharge of HI ions at the negative electrodes, leaving behind immobile surface-bound SiO- groups and thus showing that chemisorption phenomena are decisive for electrostatic charging of insulators.
引用
收藏
页码:4631 / 4637
页数:7
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