Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry

被引：41

作者：

Kessels, WMM ^{[1
]}

Leroux, A ^{[1
]}

Boogaarts, MGH ^{[1
]}

Hoefnagels, JPM ^{[1
]}

van de Sanden, MCM ^{[1
]}

Schram, DC ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, Ctr Plasma Phys & Radiat Technol, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2001年 / 19卷 / 02期

关键词：

D O I：

10.1116/1.1339015

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Spatially resolved SiH3 measurements are performed by cavity ring down spectroscopy on the SiH3 (A) over tilde (2)A(1)<--(A) over tilde (2)A(1) transition at 217 nm in a remote Ar-H-2-SiH4 plasma used for high rate deposition of hydrogenated amorphous silicon. The obtained densities of SiH3 and its axial and radial distribution in the cylindrical deposition reactor are compared with simulations by a two-dimensional axisymmetric fluid dynamics model. The model, in which only three basic chemical reactions are taken into account, shows fairly good agreement with the experimental results and the plasma and surface processes as well as transport phenomena in the plasma are discussed. Furthermore, the SiH3 density determined by cavity ring down spectroscopy is in good agreement with the SiH3 density as obtained by threshold ionization mass spectrometry. (C) 2001 American Vacuum Society.

引用

页码：467 / 476

页数：10

共 29 条

[1] Cavity ring down detection of SiH3 on the broadband (A)over-tilde 2A′1 ← (X)over-tilde 2A1 transition in a remote Ar-H2-SiH4 plasma [J].