Fabrication and characterization of nanocrystalline cobalt oxide thin films

被引：132

作者：

Pejova, B ^{[1
]}

Isahi, A ^{[1
]}

Najdoski, M ^{[1
]}

Grozdanov, I ^{[1
]}

机构：

[1] Univ St Cyril & Methudius, Inst Chem, Fac Nat Sci & Math, Skopje 91000, North Macedonia

来源：

MATERIALS RESEARCH BULLETIN | 2001年 / 36卷 / 1-2期

关键词：

semiconductors; thin films; oxides; crystal growth; X-ray diffraction;

D O I：

10.1016/S0025-5408(00)00479-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple solution growth route has been employed to synthesize nanocrystalline cobalt oxide thin films on glass substrates, The obtained films were characterized by X-ray diffraction and FTIR spectroscopy. The as-deposited films were identified as a mixture of different phases of Co(OH)(2), while the annealed ones as Co3O4. The absorption of the annealed films gradually decreases with an increase of the wavelength in the 310-820 nm region, Upon annealing, the absorption coefficient decreases. The calculated band gap energy from optical absorption data for annealed films is 2.2 eV. The as-deposited thin films are dielectric, while the post-deposition heat-treated ones are characterized by resistivity of several M Omegas/cm(2) at room temperature. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：161 / 170

页数：10

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