Fabrication and characterization of thin ΔE detectors for spectroscopic application

被引:14
作者
Thungström, G [1 ]
Westerberg, L
Spohr, R
Petersson, CS
机构
[1] Mid Sweden Univ, ITM, S-85170 Sundsvall, Sweden
[2] Univ Uppsala, Svedberg Lab, S-75121 Uppsala, Sweden
[3] Gesell Schwerionenforsch mbH, D-64291 Darmstadt, Germany
[4] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden
关键词
thin silicon detector; Delta E detector; energy straggling; ion channeling;
D O I
10.1016/j.nima.2005.03.053
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Ultra-thin Delta Edetectors for spectroscopic applications have been fabricated and characterized down to a thickness of 4.5 mu m. A common one-side mask aligner was used to fabricate the detectors. The detectors display low leakage current and the resulting capacitance is close to the detector window capacitance below a threshold voltage. The detector telescope needs to be slightly tilted to reduce the probability for channeling. However, even better control of the thickness uniformity is needed to improve the resolution in the Delta E-E detector telescope. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:312 / 318
页数:7
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