Enhanced multi-threshold (MTCMOS) circuits using variable well bias

被引：43

作者：

Kosonocky, SV ^{[1
]}

Immediato, M ^{[1
]}

Cottrell, P ^{[1
]}

Hook, T ^{[1
]}

Mann, R ^{[1
]}

Brown, J ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

ISLPED'01: PROCEEDINGS OF THE 2001 INTERNATIONAL SYMPOSIUM ON LOWPOWER ELECTRONICS AND DESIGN | 2001年

关键词：

MTCMOS; multi-threshold; variable well bias; leakage control; low power digital circuit design;

D O I：

10.1109/LPE.2001.945394

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Advanced CMOS technology can enable high levels of performance with reduced active power at the expense of increased standby leakage. MTCMOS has previously been described as a method of reducing leakage in standby modes, by addition of a power supply interrupt switch. Enhancements using variable well bias and layout techniques are described and demonstrate increased performance and reduced leakage over conventional MTCMOS circuits.

引用

页码：165 / 169

页数：5