Growth study of Cu/Pd(111) by RHEED and XPS

被引:20
作者
de Siervo, A
Paniago, R
Soares, EA
Pfannes, HD
Landers, R
Kleiman, GG
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
[3] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
copper; palladium; low index single crystal surfaces; molecular beam epitaxy; reflection high-energy electron diffraction; (RHEED); alloying;
D O I
10.1016/j.susc.2004.11.028
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED) investigation of the growth of Cu films on a Pd(1 11) single crystal at room temperature is presented. Dynamically taken XPS-data as function of the deposition time show a linear variation of ICu-3pIIPd-(3d) and a periodic change of its slope indicating a nearly layer-by-layer growth process. RHEED oscillations are seen for the 3-4 first layers, also suggesting a smooth growth mode. From the evolution of the RHEED-streaks separation the in-plane Cu-atom spacing is precisely determined. Up to a coverage of ca. 2-3 monolayers (ML) Cu grows pseudomorphously on Pd(1 11), despite the -7.1% strain imposed by the substrate lattice parameter. Non-pseudomorphous epitaxial growth is evidenced above ca. 3-4 ML by a discontinuous change in lateral lattice spacing observed by RHEED which indicates a relaxation to the Cu(1 11) "natural" surface lattice parameter. In addition it is concluded that surface alloying does not take place at least at room temperature (RT)-XPS spectra taken dynamically during annealing show that alloying occurs only above RT. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:217 / 222
页数:6
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