Corrugated QWIP array fabrication and characterization

被引：15

作者：

Choi, KK ^{[1
]}

Goldberg, AC ^{[1
]}

Das, NC ^{[1
]}

Jhabvala, MD ^{[1
]}

Bailey, RB ^{[1
]}

Vural, K ^{[1
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20833 USA

来源：

PHOTODETECTORS: MATERIALS AND DEVICES III | 1998年 / 3287卷

关键词：

infrared detector; optical coupling; quantum wells; focal plane array;

D O I：

10.1117/12.304473

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A corrugated quantum well infrared photodetector (C-QWIP) focal plane array (FPA) with cutoff at 11.2 mu m has been fabricated and characterized. The C-QWIP array uses total internal reflection to couple normal incident light into the pixels. The processing steps involve only one chemical etching, one optional reactive ion etching, and one ohmic contact metalization. The detector array has 256 x 256 pixel elements, indium bumped to a direct injection readout circuit. The photocurrent to dark current ratio measured In this FPA, on which the noise equivalent temperature difference (NE Delta T) depends, is consistent with that of a large area test sample. The array shows good responsivity unformity (sigma) of 5.2% with no extra leakage current resulted from array processing. The estimated NE Delta T of this array, excluding the readout noise, is 17 mK at T = 63 K. The fact that this FPA can be operated at a temperature similar to those of standard QWIP arrays with much shorter wavelengths shows that the C-QWIP structure can greatly increase array performance.

引用

页码：118 / 127

页数：10