Transport properties of compensated mu c-Si:H

Electron and hole transport in completely microcrystalline silicon (mu c-Si) p-i-n cells and in intrinsic or near intrinsic mu c-Si layers have been investigated, for the first time, by time of flight (TOF) at temperatures between 100 and 400 K. At room temperature, both electron and hole drift mobilities were found to be between 0.2 and 1 cm(2)V(-1)s(-1). No trace of anomalous dispersive transport was observed, neither for electrons nor for holes, down to 100 K. A decrease of the drift mobility was observed when the temperature was raised from room temperature to 400 K as usually observed in crystalline semiconductors. However, these experimental values of the drift mobilities appear more puzzling than helpful for the comprehension of this ''new'' photovoltaic material.